SIHG105 Series

Catalog

MOSFET N-CH 600V 29A TO247AC

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIHG105N60EF-GE3	600 V	29 A	208 W	102 mOhm	MOSFET (Metal Oxide)	30 V	1804 pF	Through Hole	N-Channel	-55 °C	150 °C	53 nC	5 V	TO-247-3	TO-247AC	10 V