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F3L11MR12W2M1HPB19BPSA1
Discrete Semiconductor Products

F3L11MR12W2M1HPB19BPSA1

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INFINEON

THE F3L11MR12W2M1HP_B19 IS A COOLSIC™ MOSFET 3-LEVEL MODULE 1200 V, 11MΩ

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F3L11MR12W2M1HPB19BPSA1
Discrete Semiconductor Products

F3L11MR12W2M1HPB19BPSA1

Active
INFINEON

THE F3L11MR12W2M1HP_B19 IS A COOLSIC™ MOSFET 3-LEVEL MODULE 1200 V, 11MΩ

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationF3L11MR12W2M1HPB19BPSA1
Configuration4 N-Channel
Current - Continuous Drain (Id) @ 25°C65 A
Drain to Source Voltage (Vdss)1.2 kV
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs [Max]223 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6600 pF
Mounting TypeChassis Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / CaseModule
Rds On (Max) @ Id, Vgs [Max]16 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id5.15 V
PartSupplier Device PackageIGBT TypeInput Capacitance (Cies) @ VceVce(on) (Max) @ Vge, IcNTC ThermistorOperating Temperature [Min]Operating Temperature [Max]Power - Max [Max]Package / CaseInputVoltage - Collector Emitter Breakdown (Max) [Max]Mounting TypeCurrent - Collector Cutoff (Max) [Max]ConfigurationCurrent - Collector (Ic) (Max) [Max]Current - Continuous Drain (Id) @ 25°CTechnologyGate Charge (Qg) (Max) @ Vgs [Max]Rds On (Max) @ Id, Vgs [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]Drain to Source Voltage (Vdss)Drain to Source Voltage (Vdss)Vgs(th) (Max) @ Id
AG-EASY2BM-2
Trench
7.36 nF
2.1 V
-40 °C
150 °C
20 mW
Module
Standard
1200 V
Chassis Mount
40 µA
Three Level Inverter
100 A
-40 °C
175 °C
Module
Chassis Mount
4 N-Channel
65 A
Silicon Carbide (SiC)
223 nC
16 mOhm
6600 pF
1.2 kV
1200 V
5.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 134.66
10$ 132.31
DigikeyN/A 26$ 144.01
Tray 1$ 216.09
18$ 202.40
36$ 194.79
NewarkEach 1$ 152.61
5$ 146.91
10$ 141.22
36$ 135.52

Description

General part information

F3L11MR12 Series

EasyPACK™ 2BCoolSiC™ MOSFET3-level module in NPC2 topology 1200 V, 11mΩ G1 with NTC, pre-applied thermal interface material (TIM) andPressFITcontact technology.

Documents

Technical documentation and resources