Specification	STF13N60DM2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	730 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	365 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STF13N60DM2 Series

N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package

Part	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
STMicroelectronics STF13N60DM2	Through Hole	600 V	19 nC	25 W	365 mOhm	MOSFET (Metal Oxide)	TO-220FP	N-Channel	730 pF	150 °C	-55 °C	10 V	25 V	TO-220-3 Full Pack	11 A	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	290	$ 2.27
Newark	Each	1	$ 3.17
		10	$ 1.78
		100	$ 1.65
		500	$ 1.43
		1000	$ 1.33
		3000	$ 1.27
		5000	$ 1.24

Description

General part information

STF13N60DM2 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

STF13N60DM2 | Datasheet

Datasheet