
Discrete Semiconductor Products
IRFZ44ESTRRPBF
ObsoleteINFINEON
IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 23 MOHM;
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Discrete Semiconductor Products
IRFZ44ESTRRPBF
ObsoleteINFINEON
IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 23 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRFZ44ESTRRPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 48 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 110 W |
| Rds On (Max) @ Id, Vgs | 23 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
| Part | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Power Dissipation (Max) | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 4 V | 49 A | 10 V | D2PAK | 3.8 W 94 W | N-Channel | 17.5 mOhm | 63 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1470 pF | Surface Mount | 175 °C | -55 °C | 55 V | MOSFET (Metal Oxide) | 20 V | ||||
INFINEON | 4 V | 57 A | 10 V | TO-220AB | 92 W | N-Channel | 12 mOhm | TO-220-3 | 1690 pF | Through Hole | 175 °C | -55 °C | 60 V | MOSFET (Metal Oxide) | 20 V | 65 nC | ||||
INFINEON | 4 V | 48 A | 10 V | TO-220AB | 110 W | N-Channel | 23 mOhm | 60 nC | TO-220-3 | Through Hole | 175 °C | -55 °C | 60 V | MOSFET (Metal Oxide) | 20 V | 1360 pF | ||||
INFINEON | 4 V | 49 A | 10 V | D2PAK TO-263 (D2PAK) | 3.8 W 94 W | N-Channel | 17.5 mOhm | 63 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1470 pF | Surface Mount | 155 °C 175 °C | -55 °C | 55 V | MOSFET (Metal Oxide) | 20 V | ||||
INFINEON | 4 V | 51 A | 10 V | TO-262 | N-Channel | 13.9 mOhm | 43 nC | I2PAK TO-262-3 Long Leads TO-262AA | Through Hole | 175 °C | -55 °C | 55 V | MOSFET (Metal Oxide) | 20 V | 1420 pF | 80 W | ||||
INFINEON | 4 V | 48 A | 10 V | D2PAK | 110 W | N-Channel | 23 mOhm | 60 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 175 °C | -55 °C | 60 V | MOSFET (Metal Oxide) | 20 V | 1360 pF | ||||
INFINEON | 4 V | 55 A | 10 V | TO-220AB | 115 W | N-Channel | 16.5 mOhm | TO-220-3 | Through Hole | 175 °C | -55 °C | 60 V | MOSFET (Metal Oxide) | 20 V | 1812 pF | |||||
INFINEON | 4 V | 51 A | 10 V | TO-262 | N-Channel | 13.9 mOhm | 43 nC | I2PAK TO-262-3 Long Leads TO-262AA | Through Hole | 175 °C | -55 °C | 55 V | MOSFET (Metal Oxide) | 20 V | 1420 pF | 80 W | ||||
INFINEON | 4 V | 51 A | 10 V | TO-220AB | N-Channel | 13.9 mOhm | 43 nC | TO-220-3 | Through Hole | 175 °C | -55 °C | 55 V | MOSFET (Metal Oxide) | 20 V | 1420 pF | 80 W | ||||
INFINEON | 4 V | 57 A | 10 V | D2PAK | 92 W | N-Channel | 12 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1690 pF | Surface Mount | 175 °C | -55 °C | 60 V | MOSFET (Metal Oxide) | 20 V | 65 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
IRFZ44 Series
The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.