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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IRFZ44ESTRRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 23 MOHM;

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IRFZ44ESTRRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 23 MOHM;

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Technical Specifications

Parameters and characteristics for this part

SpecificationIRFZ44ESTRRPBF
Current - Continuous Drain (Id) @ 25°C48 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC
Input Capacitance (Ciss) (Max) @ Vds1360 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)110 W
Rds On (Max) @ Id, Vgs23 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V
PartVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Supplier Device PackagePower Dissipation (Max)FET TypeRds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsPackage / CaseInput Capacitance (Ciss) (Max) @ Vds [Max]Mounting TypeOperating Temperature [Max]Operating Temperature [Min]Drain to Source Voltage (Vdss)TechnologyVgs (Max)Gate Charge (Qg) (Max) @ Vgs [Max]Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max) [Max]Input Capacitance (Ciss) (Max) @ Vds
4 V
49 A
10 V
D2PAK
3.8 W
94 W
N-Channel
17.5 mOhm
63 nC
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
1470 pF
Surface Mount
175 °C
-55 °C
55 V
MOSFET (Metal Oxide)
20 V
TO-220AB PKG
INFINEON
4 V
57 A
10 V
TO-220AB
92 W
N-Channel
12 mOhm
TO-220-3
1690 pF
Through Hole
175 °C
-55 °C
60 V
MOSFET (Metal Oxide)
20 V
65 nC
STMICROELECTRONICS STGP6NC60HD
INFINEON
4 V
48 A
10 V
TO-220AB
110 W
N-Channel
23 mOhm
60 nC
TO-220-3
Through Hole
175 °C
-55 °C
60 V
MOSFET (Metal Oxide)
20 V
1360 pF
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
4 V
49 A
10 V
D2PAK
TO-263 (D2PAK)
3.8 W
94 W
N-Channel
17.5 mOhm
63 nC
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
1470 pF
Surface Mount
155 °C
175 °C
-55 °C
55 V
MOSFET (Metal Oxide)
20 V
AUIRFSL6535
INFINEON
4 V
51 A
10 V
TO-262
N-Channel
13.9 mOhm
43 nC
I2PAK
TO-262-3 Long Leads
TO-262AA
Through Hole
175 °C
-55 °C
55 V
MOSFET (Metal Oxide)
20 V
1420 pF
80 W
4 V
48 A
10 V
D2PAK
110 W
N-Channel
23 mOhm
60 nC
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
Surface Mount
175 °C
-55 °C
60 V
MOSFET (Metal Oxide)
20 V
1360 pF
Infineon Technologies AG-IRF1010EZPBF MOSFETs Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube
INFINEON
4 V
55 A
10 V
TO-220AB
115 W
N-Channel
16.5 mOhm
TO-220-3
Through Hole
175 °C
-55 °C
60 V
MOSFET (Metal Oxide)
20 V
1812 pF
AUIRFSL6535
INFINEON
4 V
51 A
10 V
TO-262
N-Channel
13.9 mOhm
43 nC
I2PAK
TO-262-3 Long Leads
TO-262AA
Through Hole
175 °C
-55 °C
55 V
MOSFET (Metal Oxide)
20 V
1420 pF
80 W
TO-220AB PKG
INFINEON
4 V
51 A
10 V
TO-220AB
N-Channel
13.9 mOhm
43 nC
TO-220-3
Through Hole
175 °C
-55 °C
55 V
MOSFET (Metal Oxide)
20 V
1420 pF
80 W
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
4 V
57 A
10 V
D2PAK
92 W
N-Channel
12 mOhm
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
1690 pF
Surface Mount
175 °C
-55 °C
60 V
MOSFET (Metal Oxide)
20 V
65 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IRFZ44 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.