TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

IRFZ44NSTRLPBF

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INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 17.5 MOHM;

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DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRFZ44NSTRLPBF

Active

INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 17.5 MOHM;

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DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFZ44NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	49 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	94 W, 3.8 W
Rds On (Max) @ Id, Vgs	17.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFZ44 Series

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IRFZ44NSTRLPBF	4 V	49 A	10 V	D2PAK	3.8 W 94 W	N-Channel	17.5 mOhm	63 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1470 pF	Surface Mount	175 °C	-55 °C	55 V	MOSFET (Metal Oxide)	20 V
INFINEON IRFZ44VZPBF	4 V	57 A	10 V	TO-220AB	92 W	N-Channel	12 mOhm		TO-220-3	1690 pF	Through Hole	175 °C	-55 °C	60 V	MOSFET (Metal Oxide)	20 V	65 nC
INFINEON IRFZ44EPBF	4 V	48 A	10 V	TO-220AB	110 W	N-Channel	23 mOhm	60 nC	TO-220-3		Through Hole	175 °C	-55 °C	60 V	MOSFET (Metal Oxide)	20 V		1360 pF
INFINEON 94-2386	4 V	49 A	10 V	D2PAK TO-263 (D2PAK)	3.8 W 94 W	N-Channel	17.5 mOhm	63 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1470 pF	Surface Mount	155 °C 175 °C	-55 °C	55 V	MOSFET (Metal Oxide)	20 V
INFINEON IRFZ44ZLPBF	4 V	51 A	10 V	TO-262		N-Channel	13.9 mOhm	43 nC	I2PAK TO-262-3 Long Leads TO-262AA		Through Hole	175 °C	-55 °C	55 V	MOSFET (Metal Oxide)	20 V		1420 pF	80 W
INFINEON IRFZ44ESTRRPBF	4 V	48 A	10 V	D2PAK	110 W	N-Channel	23 mOhm	60 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		Surface Mount	175 °C	-55 °C	60 V	MOSFET (Metal Oxide)	20 V		1360 pF
INFINEON IRFZ44VPBF	4 V	55 A	10 V	TO-220AB	115 W	N-Channel	16.5 mOhm		TO-220-3		Through Hole	175 °C	-55 °C	60 V	MOSFET (Metal Oxide)	20 V				1812 pF
INFINEON IRFZ44ZLPBF	4 V	51 A	10 V	TO-262		N-Channel	13.9 mOhm	43 nC	I2PAK TO-262-3 Long Leads TO-262AA		Through Hole	175 °C	-55 °C	55 V	MOSFET (Metal Oxide)	20 V		1420 pF	80 W
INFINEON IRFZ44ZPBF	4 V	51 A	10 V	TO-220AB		N-Channel	13.9 mOhm	43 nC	TO-220-3		Through Hole	175 °C	-55 °C	55 V	MOSFET (Metal Oxide)	20 V		1420 pF	80 W
INFINEON IRFZ44VZSPBF	4 V	57 A	10 V	D2PAK	92 W	N-Channel	12 mOhm		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1690 pF	Surface Mount	175 °C	-55 °C	60 V	MOSFET (Metal Oxide)	20 V	65 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.52
		10	$ 0.97
		100	$ 0.66
	Digi-Reel®	1	$ 1.52
		10	$ 0.97
		100	$ 0.66
	N/A	8927	$ 1.90
	Tape & Reel (TR)	800	$ 0.58
Newark	Each (Supplied on Full Reel)	800	$ 0.83
		1600	$ 0.82
		3200	$ 0.80
		4800	$ 0.80

Description

General part information

IRFZ44 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Documents

Technical documentation and resources