Discrete Semiconductor Products

PBSS5330PA,135

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TRANS PNP 30V 3A 3HUSON

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Discrete Semiconductor Products

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TRANS PNP 30V 3A 3HUSON

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS5330PA,135

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	165 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-PowerUDFN
Power - Max [Max]	500 mW
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	320 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Frequency - Transition	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	Current - Collector Cutoff (Max) [Max]	Mounting Type	Operating Temperature	Supplier Device Package	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Freescale Semiconductor - NXP PBSS5330PASX	165 MHz	3-UDFN Exposed Pad	600 mW	30 V	Automotive	100 nA	Surface Mount	175 °C	DFN2020D-3	PNP	320 mV	3 A	AEC-Q100	175 hFE
Freescale Semiconductor - NXP PBSS5330PA,135	165 MHz	3-PowerUDFN	500 mW	30 V		100 nA	Surface Mount	150 °C		PNP	320 mV	3 A		100
Freescale Semiconductor - NXP PBSS5330X,115	100 MHz	TO-243AA	1.6 W	30 V	Automotive	100 nA	Surface Mount	150 °C		PNP	320 mV	3 A	AEC-Q100	175 hFE
Freescale Semiconductor - NXP PBSS5330X,135	100 MHz	TO-243AA	1.6 W	30 V	Automotive	100 nA	Surface Mount	150 °C		PNP	320 mV	3 A	AEC-Q100	175 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 30 V 3 A 165MHz 500 mW Surface Mount 3-HUSON (2x2)

Technical documentation and resources