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3-HUSON
Discrete Semiconductor Products

PBSS5330PA,135

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Nexperia USA Inc.

TRANS GP BJT PNP 30V 3A 2100MW 3-PIN HUSON T/R

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3-HUSON
Discrete Semiconductor Products

PBSS5330PA,135

Active
Nexperia USA Inc.

TRANS GP BJT PNP 30V 3A 2100MW 3-PIN HUSON T/R

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5330PA,135
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce100
Frequency - Transition165 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-PowerUDFN
Power - Max [Max]500 mW
Supplier Device Package3-HUSON
Supplier Device Package [x]2
Supplier Device Package [y]2
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic320 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.51
Digi-Reel® 1$ 0.51
N/A 0$ 0.16
2716000$ 0.32
Tape & Reel (TR) 10000$ 0.12
30000$ 0.11
50000$ 0.11

Description

General part information

PBSS5330 Series

PNP low VCEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

Documents

Technical documentation and resources