
Discrete Semiconductor Products
PBSS5330PA,115
ActiveNexperia USA Inc.
TRANS GP BJT PNP 30V 3A 2100MW 3-PIN HUSON T/R
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Discrete Semiconductor Products
PBSS5330PA,115
ActiveNexperia USA Inc.
TRANS GP BJT PNP 30V 3A 2100MW 3-PIN HUSON T/R
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS5330PA,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 175 hFE |
| Frequency - Transition | 165 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 3-PowerUDFN |
| Power - Max [Max] | 2.1 W |
| Supplier Device Package | 3-HUSON |
| Supplier Device Package [x] | 2 |
| Supplier Device Package [y] | 2 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 320 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS5330 Series
PNP low VCEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
Documents
Technical documentation and resources