Discrete Semiconductor Products

SPB12N50C3ATMA1

Obsolete

MOSFET N-CH 560V 11.6A TO263-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 560V 11.6A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPB12N50C3ATMA1

Current - Continuous Drain (Id) @ 25°C	11.6 A
Drain to Source Voltage (Vdss)	560 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	49 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs [Max]	380 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type
INFINEON SPB12N50C3ATMA1	125 W	1200 pF	49 nC	PG-TO263-3-2	10 V	MOSFET (Metal Oxide)	20 V	380 mOhm	150 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.9 V	Surface Mount	11.6 A	560 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 560 V 11.6A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources