SPB12N Series
Manufacturer: INFINEON
MOSFET N-CH 560V 11.6A TO263-3
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs (Max) | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 125 W | 1200 pF | 49 nC | PG-TO263-3-2 | 10 V | MOSFET (Metal Oxide) | 20 V | 380 mOhm | 150 °C | -55 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.9 V | Surface Mount | 11.6 A | 560 V | N-Channel |