Discrete Semiconductor Products

JANTXV1N6630US/TR

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Microchip Technology

MIL-PRF-19500-590

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Discrete Semiconductor Products

JANTXV1N6630US/TR

Active

Microchip Technology

MIL-PRF-19500-590

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JANTXV1N6630US/TR

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	1.4 A
Current - Reverse Leakage @ Vr	2 µA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	E, SQ-MELF
Qualification	MIL-PRF-19500
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	E-MELF
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	900 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

JANTXV1N6630US-Rectifier Series

MIL-PRF-195000-590

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Qualification	Reverse Recovery Time (trr)	Technology	Voltage - Forward (Vf) (Max) @ If	Speed	Grade	Mounting Type	Capacitance @ Vr, F
Microchip Technology JANTXV1N6630US	1000 V	E SQ-MELF	150 °C	-65 C	D-5B	2 µA	1.4 A	MIL-PRF-19500/590	50 ns	Standard	1.4 V	200 mA 500 ns	Military	Surface Mount
Microchip Technology JAN1N6630US	900 V	E SQ-MELF	150 °C	-65 C	D-5B	2 µA	1.4 A	MIL-PRF-19500/590	50 ns	Standard	1.4 V	200 mA 500 ns	Military	Surface Mount
Microchip Technology 1N6630US/TR	900 V	E SQ-MELF	150 °C	-65 C	D-5B	4 µA	1.4 A		50 ns	Standard	1.7 V	200 mA 500 ns		Surface Mount
Microchip Technology 1N6630/TR	990 V	A Axial	150 °C	-65 C	A Axial	2 µA	1.4 A		50 ns	Standard	1.4 V	200 mA 500 ns		Through Hole	40 pF
Microchip Technology JANTXV1N6630/TR	900 V	E Axial	150 °C	-65 C	E-PAK	2 µA	1.4 A	MIL-PRF-19500/590	50 ns	Standard	1.4 V	200 mA 500 ns	Military	Through Hole
Microchip Technology JANTXV1N6630	900 V	E Axial	150 °C	-65 C	E-PAK	2 µA	1.4 A	MIL-PRF-19500/590	50 ns	Standard	1.4 V	200 mA 500 ns	Military	Through Hole
Microchip Technology JANTXV1N6630US/TR	900 V	E SQ-MELF	150 °C	-65 C	E-MELF	2 µA	1.4 A	MIL-PRF-19500	60 ns	Standard	1.4 V	200 mA 500 ns	Military	Surface Mount	40 pF
Microchip Technology 1N6630	990 V	A Axial	150 °C	-65 C	A Axial	2 µA	1.4 A		50 ns	Standard	1.4 V	200 mA 500 ns		Through Hole	40 pF
Microchip Technology 1N6630US	900 V	E SQ-MELF	150 °C	-65 C	D-5B	4 µA	1.4 A		50 ns	Standard	1.7 V	200 mA 500 ns		Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	100	$ 22.98
Microchip Direct	N/A	1	$ 24.75
		100	$ 22.98
		500	$ 22.10
		1000	$ 20.86

Description

General part information

JANTXV1N6630US-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6626US thru 1N6631US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources