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SOT8002-1
Discrete Semiconductor Products

PXN018-30QLJ

Active
Nexperia USA Inc.

MOSFETS N-CHANNEL 100 V, 20 MOHM, STANDARD LEVEL TRENCH MOSFET IN MLPAK33

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Documentsplastic thermal enhanced surface mounted package; mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body30 V, N-channel Trench MOSFET+5
SOT8002-1
Discrete Semiconductor Products

PXN018-30QLJ

Active
Nexperia USA Inc.

MOSFETS N-CHANNEL 100 V, 20 MOHM, STANDARD LEVEL TRENCH MOSFET IN MLPAK33

Deep-Dive with AI

Documentsplastic thermal enhanced surface mounted package; mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body30 V, N-channel Trench MOSFET+5

Technical Specifications

Parameters and characteristics for this part

SpecificationPXN018-30QLJ
Current - Continuous Drain (Id) @ 25°C19.2 A, 7.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.8 nC
Input Capacitance (Ciss) (Max) @ Vds447 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)10.9 W, 1.7 W
Rds On (Max) @ Id, Vgs18 mOhm
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 5947$ 0.41
MouserN/A 1$ 0.33
10$ 0.20
100$ 0.17
250$ 0.16
500$ 0.15
1000$ 0.15
3000$ 0.14
6000$ 0.13
9000$ 0.13

Description

General part information

PXN018-30QL Series

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.