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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs (Max) | Package / Case | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 7.5 A 19.2 A | 150 °C | -55 °C | 2.5 V | MLPAK33 | Surface Mount | 18 mOhm | 447 pF | 10.8 nC | 1.7 W 10.9 W | 4.5 V 10 V | MOSFET (Metal Oxide) | 20 V | 8-PowerVDFN | N-Channel | 30 V |