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STMICROELECTRONICS STTH506DTI
Discrete Semiconductor Products

STTH8ST06DI

Obsolete
STMicroelectronics

DIODE, SINGLE, 600V, 8A, TO-220AC ROHS COMPLIANT: YES

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STMICROELECTRONICS STTH506DTI
Discrete Semiconductor Products

STTH8ST06DI

Obsolete
STMicroelectronics

DIODE, SINGLE, 600V, 8A, TO-220AC ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationSTTH8ST06DI
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr6 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Reverse Recovery Time (trr)17 ns
Speed500 ns, 200 mA
Supplier Device PackageTO-220AC ins
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If3.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 590$ 1.05
NewarkEach 1$ 1.74
10$ 1.69
100$ 1.65
500$ 1.31
1000$ 1.27
3000$ 1.26
5000$ 1.24

Description

General part information

STTH8ST06 Series

This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switching-losses with a minimized QRRthat makes it perfect for use in circuits working in hard-switching mode. In particular the VF/ QRRtrade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.

The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints.

Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits.