Discrete Semiconductor Products
STD46P4LLF6
ActiveSTMicroelectronics
P-CHANNEL 40 V, 0.0125 OHM TYP., 46 A STRIPFET F6 POWER MOSFET IN A DPAK PACKAGE
Discrete Semiconductor Products
STD46P4LLF6
ActiveSTMicroelectronics
P-CHANNEL 40 V, 0.0125 OHM TYP., 46 A STRIPFET F6 POWER MOSFET IN A DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD46P4LLF6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 46 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3525 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) [Max] | 70 W |
| Rds On (Max) @ Id, Vgs | 15 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD46P4LLF6 Series
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Documents
Technical documentation and resources