Discrete Semiconductor Products

IPS65R950C6AKMA1

Obsolete

MOSFET N-CH 650V 4.5A TO251-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 4.5A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPS65R950C6AKMA1

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.3 nC
Input Capacitance (Ciss) (Max) @ Vds	328 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	37 W
Rds On (Max) @ Id, Vgs	950 mOhm
Supplier Device Package	PG-TO251-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPS65R950C6AKMA1	650 V	20 V	37 W	328 pF	15.3 nC	950 mOhm	150 °C	-55 °C	4.5 A	TO-251-3 Stub Leads IPAK	Through Hole	10 V	MOSFET (Metal Oxide)	N-Channel	3.5 V	PG-TO251-3-11
INFINEON IPS65R1K5CEAKMA1	650 V	20 V	28 W	225 pF	10.5 nC	1.5 Ohm	150 °C	-40 °C	3.1 A	TO-251-3 Stub Leads IPAK	Through Hole	10 V	MOSFET (Metal Oxide)	N-Channel	3.5 V
INFINEON IPS65R1K0CEAKMA1	650 V	20 V	37 W	328 pF	15.3 nC		150 °C	-40 °C	4.3 A	TO-251-3 Stub Leads IPAK	Through Hole	10 V	MOSFET (Metal Oxide)	N-Channel	3.5 V		1 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 4.5A (Tc) 37W (Tc) Through Hole PG-TO251-3-11

Technical documentation and resources