IPS65R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 650V 4.5A TO251-3

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPS65R950C6AKMA1	650 V	20 V	37 W	328 pF	15.3 nC	950 mOhm	150 °C	-55 °C	4.5 A	TO-251-3 Stub Leads IPAK	Through Hole	10 V	MOSFET (Metal Oxide)	N-Channel	3.5 V	PG-TO251-3-11
INFINEON IPS65R1K5CEAKMA1	650 V	20 V	28 W	225 pF	10.5 nC	1.5 Ohm	150 °C	-40 °C	3.1 A	TO-251-3 Stub Leads IPAK	Through Hole	10 V	MOSFET (Metal Oxide)	N-Channel	3.5 V
INFINEON IPS65R1K0CEAKMA1	650 V	20 V	37 W	328 pF	15.3 nC		150 °C	-40 °C	4.3 A	TO-251-3 Stub Leads IPAK	Through Hole	10 V	MOSFET (Metal Oxide)	N-Channel	3.5 V		1 Ohm