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ROHM RGTH40TK65GC11

Discrete Semiconductor Products

RGTV60TK65GVC11

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Rohm Semiconductor

2ΜS SHORT-CIRCUIT TOLERANCE, 650V 30A, TO-3PFM, FIELD STOP TRENCH IGBT

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN PCB Layout Thermal Design Guide +39

ROHM RGTH40TK65GC11

Discrete Semiconductor Products

RGTV60TK65GVC11

Active

Rohm Semiconductor

2ΜS SHORT-CIRCUIT TOLERANCE, 650V 30A, TO-3PFM, FIELD STOP TRENCH IGBT

Deep-Dive with AI

DocumentsTechnical Data Sheet EN PCB Layout Thermal Design Guide +39

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGTV60TK65GVC11

Current - Collector (Ic) (Max) [Max]	33 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	64 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-3PFM, SC-93-3
Power - Max [Max]	76 W
Supplier Device Package	TO-3PFM
Switching Energy	500 µJ, 570 µJ
Td (on/off) @ 25°C [custom]	105 ns
Td (on/off) @ 25°C [custom]	33 ns
Test Condition	30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	450	$ 6.55
	Tube	1	$ 4.64
		10	$ 3.12
		100	$ 2.63
Newark	Each	1	$ 4.12
		10	$ 3.24
		25	$ 2.76
		50	$ 2.75
		100	$ 2.74

Description

General part information

RGTV60 Series

RGTV60TK65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.

Documents

Technical documentation and resources

Technical Data Sheet EN

PCB Layout Thermal Design Guide

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Precautions When Measuring the Rear of the Package with a Thermocouple

How to Create Symbols for PSpice Models

Part Explanation

Application Note

Notes for Temperature Measurement Using Thermocouples

4 Steps for Successful Thermal Designing of Power Devices

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Notes for Calculating Power Consumption:Static Operation

Basics of Thermal Resistance and Heat Dissipation

Judgment Criteria of Thermal Evaluation

Package Dimensions

Package Information

How to Use LTspice® Models

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Types and Features of Transistors

Application Note

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Moisture Sensitivity Level

Package Information

Estimation of switching losses in IGBTs operating with resistive load

Schematic Design & Verification

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

What is a Thermal Model? (IGBT)

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Anti-Whisker formation

Package Information

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

Precautions for Thermal Resistance of Insulation Sheet

About Export Administration Regulations (EAR)

Export Information

New Gen 3 650V IGBT - A Soft And Efficient Switch For Industrial Applications

Application Note

About Flammability of Materials

Environmental Data

Two-Resistor Model for Thermal Simulation

θ<sub>JC</sub> and Ψ<sub>JT</sub>

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Compliance of the ELV directive

Environmental Data

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Measurement Method and Usage of Thermal Resistance RthJC

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

What Is Thermal Design

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

RGTV60 Series

2µs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Test Condition	Power - Max [Max]	Switching Energy	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Gate Charge	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Reverse Recovery Time (trr)
Rohm Semiconductor RGTV60TK65GVC11	Through Hole	33 A	TO-3PFM	Trench Field Stop	175 °C	-40 °C	10 Ohm 15 V 30 A 400 V	76 W	500 µJ 570 µJ	1.9 V	120 A	650 V	SC-93-3 TO-3PFM	64 nC	105 ns	33 ns
Rohm Semiconductor RGTV60TK65DGVC11	Through Hole	33 A	TO-3PFM	Trench Field Stop	175 °C	-40 °C	10 Ohm 15 V 30 A 400 V	76 W	500 µJ 570 µJ	1.9 V	120 A	650 V	SC-93-3 TO-3PFM	64 nC	105 ns	33 ns	95 ns