RGTV60TK65D Series

2µs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

Catalog

2µs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

Part	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	IGBT Type	Test Condition	Current - Collector Pulsed (Icm)	Gate Charge	Switching Energy	Power - Max [Max]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C
Rohm Semiconductor RGTV60TK65DGVC11	SC-93-3 TO-3PFM	Through Hole	33 A	1.9 V	-40 C	175 °C	650 V	TO-3PFM	Trench Field Stop	10 Ohm 15 V 30 A 400 V	120 A	64 nC	500 µJ 570 µJ	76 W	95 ns	33 ns 105 ns

Catalog

2µs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

Key Features

• Low Collector - Emitter Saturation Voltage, High Speed Switching & Low Switching Loss, Short Circuit Withstand Time 2μs, Built in Very Fast & Soft Recovery FRD, Pb - free Lead Plating ; RoHS Compliant

Description

RGTV60TK65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.