Discrete Semiconductor Products
PSMN2R2-40YSDX
ActiveNexperia USA Inc.
N-CHANNEL 40 V, 2.2 MΩ, 180 A STANDARD LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY
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Discrete Semiconductor Products
PSMN2R2-40YSDX
ActiveNexperia USA Inc.
N-CHANNEL 40 V, 2.2 MΩ, 180 A STANDARD LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY
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Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN2R2-40YSDX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 5130 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-100, SOT-669 |
| Power Dissipation (Max) | 166 W |
| Rds On (Max) @ Id, Vgs | 2.2 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1250 | $ 2.99 | |
Description
General part information
PSMN2R2-40YSD Series
180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
Documents
Technical documentation and resources