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8-Power TDFN
Discrete Semiconductor Products

BSC010NE2LSIATMA1

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INFINEON

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 1.05 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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8-Power TDFN
Discrete Semiconductor Products

BSC010NE2LSIATMA1

Active
INFINEON

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 1.05 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC010NE2LSIATMA1
Current - Continuous Drain (Id) @ 25°C38 A, 100 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs59 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4200 pF
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Power Dissipation (Max)96 W, 2.5 W
Rds On (Max) @ Id, Vgs1.05 mOhm
Supplier Device PackagePG-TDSON-8-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.77
10$ 1.79
100$ 1.24
500$ 1.00
1000$ 0.92
2000$ 0.85
Digi-Reel® 1$ 2.77
10$ 1.79
100$ 1.24
500$ 1.00
1000$ 0.92
2000$ 0.85
N/A 8534$ 1.86
Tape & Reel (TR) 5000$ 0.85

Description

General part information

BSC010 Series

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Documents

Technical documentation and resources