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VISHAY VS-12TTS08HM3
Discrete Semiconductor Products

IRF135B203

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INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 8.4 MOHM;

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VISHAY VS-12TTS08HM3
Discrete Semiconductor Products

IRF135B203

Active
INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 8.4 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF135B203
Current - Continuous Drain (Id) @ 25°C129 A
Drain to Source Voltage (Vdss)135 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]270 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]9700 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)441 W
Rds On (Max) @ Id, Vgs8.4 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
250$ 0.00
Tube 1$ 2.82
10$ 1.85
100$ 1.35
NewarkEach 1$ 3.22
10$ 2.72
100$ 2.23
500$ 2.21
1000$ 2.14
2500$ 2.13

Description

General part information

IRF135 Series

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.

Documents

Technical documentation and resources