Discrete Semiconductor Products
GANB012-040CBAZ
ActiveNexperia USA Inc.
40 V, 12 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 1.2 MM X 1.7 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)
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Search across all available documentation for this part.
Discrete Semiconductor Products
GANB012-040CBAZ
ActiveNexperia USA Inc.
40 V, 12 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 1.2 MM X 1.7 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GANB012-040CBAZ |
|---|---|
| null | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.30 | |
Description
General part information
GANB012-040CBA Series
The GANB012-040CBA is a 40 V, 12 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance.
Documents
Technical documentation and resources