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GANB012-040CBAZActive
Nexperia USA Inc.
40 V, 12 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 1.2 MM X 1.7 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)
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GANB012-040CBAZ | Datasheet
Probing considerations for fast switching applications