Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMCB60XNZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.8 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 2.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 241 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-XFDFN |
| Power Dissipation (Max) | 480 mW, 7 W |
| Rds On (Max) @ Id, Vgs | 50 mOhm |
| Supplier Device Package | DSN1006-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 18177 | $ 0.79 | |
Description
General part information
PMCB60XN Series
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology.
Documents
Technical documentation and resources