Catalog
30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology.
Beta
⌘K
30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Vgs(th) (Max) @ Id | Mounting Type | FET Type | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | DSN1006-3 | 4 A | 1.8 V | 4.5 V | 2.7 nC | 150 °C | -55 °C | 7 W 480 mW | 30 V | 50 mOhm | 12 V | 1.1 V | Surface Mount | N-Channel | 3-XFDFN | MOSFET (Metal Oxide) | 241 pF |