Discrete Semiconductor Products

2SB1182TLR

NRND

Rohm Semiconductor

TRANS PNP 32V 2A CPT3

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Discrete Semiconductor Products

NRND

Rohm Semiconductor

TRANS PNP 32V 2A CPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1182TLR

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	10 W
Supplier Device Package	CPT3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Frequency - Transition	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Operating Temperature
Rohm Semiconductor 2SB1182TLR	180 hFE	10 W	32 V	PNP	100 MHz	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 nA	CPT3	800 mV	2 A	Surface Mount	150 °C
Rohm Semiconductor 2SB1182TLQ	120	10 W	32 V	PNP	100 MHz	DPAK (2 Leads + Tab) SC-63 TO-252-3	1 µA	CPT3	800 mV	2 A	Surface Mount	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 32 V 2 A 100MHz 10 W Surface Mount CPT3

Technical documentation and resources