Discrete Semiconductor Products

2SB1182TLQ

NRND

TRANS GP BJT PNP 32V 2A 10000MW 3-PIN(2+TAB) CPT T/R

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Discrete Semiconductor Products

NRND

TRANS GP BJT PNP 32V 2A 10000MW 3-PIN(2+TAB) CPT T/R

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1182TLQ

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	10 W
Supplier Device Package	CPT3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	32 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Transistor Type	Frequency - Transition	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
Rohm Semiconductor 2SB1182TLR	180	DPAK (2 Leads + Tab) SC-63 TO-252-3	PNP	100 MHz	10 W	2 A	Surface Mount	32 V	150 °C	800 mV	100 nA	CPT3
Rohm Semiconductor 2SB1182TLQ	120	DPAK (2 Leads + Tab) SC-63 TO-252-3	PNP	100 MHz	10 W	2 A	Surface Mount	32 V	150 °C	800 mV	1 µA	CPT3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 32 V 2 A 100MHz 10 W Surface Mount CPT3

Technical documentation and resources