Discrete Semiconductor Products

2N6251

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NPN TRANSISTOR

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Discrete Semiconductor Products

Active

NPN TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N6251

Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	6
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 ░C
Package / Case	TO-3, TO-204AA
Power - Max [Max]	6 W
Supplier Device Package	TO-204AA (TO-3)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	350 V

Part	Current - Collector Cutoff (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Power - Max [Max]	Supplier Device Package	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology 2N6251	1 mA	Through Hole	6	TO-204AA TO-3	6 W	TO-204AA (TO-3)	NPN	350 V	-65 ░C	200 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 350 V 10 A 6 W Through Hole TO-204AA (TO-3)

Technical documentation and resources

No documents available