Discrete Semiconductor Products

APT10035LFLLG

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Microchip Technology

MOSFET N-CH 1000V 28A TO264

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Discrete Semiconductor Products

APT10035LFLLG

Active

Microchip Technology

MOSFET N-CH 1000V 28A TO264

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	APT10035LFLLG

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	1000 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	186 nC
Input Capacitance (Ciss) (Max) @ Vds	5185 pF
Mounting Type	Through Hole
Package / Case	TO-264AA, TO-264-3
Rds On (Max) @ Id, Vgs [Max]	370 mOhm
Supplier Device Package	TO-264 [L]
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5 V

MOSFET-1000V Series

1000V MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
Microchip Technology APT1003RKLLG	10 V	139 W	N-Channel	3 Ohm	4 A	TO-220 [K]	TO-220-3	MOSFET (Metal Oxide)	30 V	1000 V	Through Hole	694 pF	34 nC	-55 °C	150 °C
Microchip Technology APT1001RBVRG			N-Channel	1 Ohm	11 A	TO-247 [B]	TO-247-3	MOSFET (Metal Oxide)		1000 V	Through Hole	3660 pF				225 nC
Microchip Technology APT10078BFLLG			N-Channel	780 mOhm	14 A	TO-247 [B]	TO-247-3	MOSFET (Metal Oxide)		1000 V	Through Hole	2525 pF	95 nC
Microchip Technology APT10045B2FLLG			N-Channel	460 mOhm	23 A	T-MAX™ [B2]	TO-247-3 Variant	MOSFET (Metal Oxide)		1000 V	Through Hole	4350 pF	154 nC				5 V
Microchip Technology APT31M100B2	10 V		N-Channel	380 mOhm	32 A	T-MAX™ [B2]	TO-247-3 Variant	MOSFET (Metal Oxide)	30 V	1000 V	Through Hole		260 nC	-55 °C	150 °C		5 V	1040 W	8500 pF
Microchip Technology APT14M100B	10 V		N-Channel		14 A	TO-247 [B]	TO-247-3	MOSFET (Metal Oxide)	30 V	1000 V	Through Hole	3965 pF		-55 °C	150 °C	120 nC		500 W		900 mOhm
Microchip Technology APT10025JVR			N-Channel	250 mOhm	34 A	ISOTOP®	SOT-227-4 miniBLOC	MOSFET (Metal Oxide)		1000 V	Chassis Mount		990 nC				4 V		18000 pF
Microchip Technology APT10035LFLLG			N-Channel		28 A	TO-264 [L]	TO-264-3 TO-264AA	MOSFET (Metal Oxide)		1000 V	Through Hole	5185 pF				186 nC	5 V			370 mOhm
Microchip Technology APT9M100B	10 V		N-Channel		9 A	TO-247 [B]	TO-247-3	MOSFET (Metal Oxide)	30 V	1000 V	Through Hole	2605 pF	80 nC	-55 °C	150 °C			335 W		1.4 Ohm
Microchip Technology APT31M100L	10 V		N-Channel	400 mOhm	32 A	TO-264	TO-264-3 TO-264AA	MOSFET (Metal Oxide)	30 V	1000 V	Through Hole		260 nC	-55 °C	150 °C		5 V	1040 W	8500 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	25	$ 32.91

Description

General part information

MOSFET-1000V Series

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel

switch-mode power transistors with lower EMI characteristics and lower cost

compared to previous generation devices. These MOSFETs / FREDFETs have been

Documents

Technical documentation and resources