Discrete Semiconductor Products

RJK1557DPA-00#J0

Active

MOSFET N-CH 150V 25A 8WPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 150V 25A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1557DPA-00#J0

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Rds On (Max) @ Id, Vgs	58 mOhm
Supplier Device Package	8-WPAK (3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [x]	Operating Temperature	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK1557DPA-00#J0	25 A	Surface Mount	N-Channel	8-PowerWDFN	10 V	MOSFET (Metal Oxide)	1250 pF	30 V	58 mOhm	8-WPAK (3)	20 nC	150 °C	150 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 25A (Ta) 30W (Tc) Surface Mount 8-WPAK (3)

Technical documentation and resources