Discrete Semiconductor Products

SIHA24N65EF-E3

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MOSFET N-CHANNEL 650V 24A TO220

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Discrete Semiconductor Products

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MOSFET N-CHANNEL 650V 24A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHA24N65EF-E3

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	122 nC
Input Capacitance (Ciss) (Max) @ Vds	2774 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	39 W
Rds On (Max) @ Id, Vgs	156 mOhm
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs (Max)	FET Type
Vishay General Semiconductor - Diodes Division SIHA24N65EF-E3	156 mOhm	2774 pF	Through Hole	650 V	24 A	TO-220-3 Full Pack	MOSFET (Metal Oxide)	-55 °C	150 °C	39 W	10 V	4 V	122 nC	TO-220 Full Pack	30 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 2.91

General part information

N-Channel 650 V 24A (Tc) 39W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources

No documents available