SIHA24 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CHANNEL 650V 24A TO220
| Part | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 156 mOhm | 2774 pF | Through Hole | 650 V | 24 A | TO-220-3 Full Pack | MOSFET (Metal Oxide) | -55 °C | 150 °C | 39 W | 10 V | 4 V | 122 nC | TO-220 Full Pack | 30 V | N-Channel |