Discrete Semiconductor Products

SIA106DJ-T1-GE3

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MOSFET N-CH 60V 10A/12A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 60V 10A/12A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIA106DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A, 10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13.5 nC
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max) @ Id, Vgs [Max]	18.5 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIA106DJ-T1-GE3	13.5 nC	PowerPAK® SC-70-6	10 V	7.5 V	60 V	MOSFET (Metal Oxide)	10 A 12 A	3.5 W 19 W	PowerPAK® SC-70-6	Surface Mount	18.5 mOhm	4 V	-55 °C	150 °C	N-Channel	20 V	540 pF

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General part information

N-Channel 60 V 10A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources