SIA106 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 60V 10A/12A PPAK
| Part | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drain to Source Voltage (Vdss) | Technology | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 13.5 nC | PowerPAK® SC-70-6 | 10 V | 7.5 V | 60 V | MOSFET (Metal Oxide) | 10 A 12 A | 3.5 W 19 W | PowerPAK® SC-70-6 | Surface Mount | 18.5 mOhm | 4 V | -55 °C | 150 °C | N-Channel | 20 V | 540 pF |