Specification	2STN1550

Current - Collector (Ic) (Max) [Max]	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	135
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1.6 W
Supplier Device Package	SOT-223
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	450 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

2STN1550 Series

Low voltage high performance NPN power transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Operating Temperature	Package / Case	Mounting Type	Transistor Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
STMicroelectronics 2STN1550	50 V	SOT-223	150 °C	TO-261-4 TO-261AA	Surface Mount	NPN	100 nA	5 A	450 mV	1.6 W	135

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The 2STF1550 and 2STN1550 are NPN transistors manufactured using new "PB-HCD" (Power bipolar high current density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Technical documentation and resources