Specification	MVB50P03HDLT4G

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	100 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

MVB50P03HDL Series

Single P-Channel Logic Level Power MOSFET -30V, -50A, 25mΩ

Part	Power Dissipation (Max)	Mounting Type	Qualification	FET Type	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Grade	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor MVB50P03HDLT4G	125 W	Surface Mount	AEC-Q101	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	15 V	2 V	Automotive	100 nC	-55 °C	150 °C	50 A	MOSFET (Metal Oxide)	25 mOhm	30 V	4900 pF	D2PAK	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MVB50P03HDL Series

Automotive Power MOSFET designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.