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Documents2N5114UB-2N5116UB
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Documents2N5114UB-2N5116UB
Technical Specifications
Parameters and characteristics for this part
| Specification | MX2N5116UB/TR |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 15 V, 5 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | P-Channel |
| Grade | Military |
| Input Capacitance (Ciss) (Max) @ Vds | 27 pF |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 500 mW |
| Qualification | MIL-PRF-19500 |
| Resistance - RDS(On) | 175 Ohms |
| Supplier Device Package | UB |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 100 | $ 85.12 | |
| Microchip Direct | N/A | 1 | $ 91.68 | |
| Newark | Each (Supplied on Full Reel) | 100 | $ 85.12 | |
| 500 | $ 81.86 | |||
Description
General part information
MX2N5116UB-Transistor Series
This family of 2N5114 through 2N5116 JFET P-CH transistors are military screened to JANTXV equivalent for high-reliability applications. These transistors are available in a (TO-18) and surfacemont UB package. Microchip also offers numerous other products to meet higher and lower power voltage regulation applications.
Documents
Technical documentation and resources