Discrete Semiconductor Products

STTH212

Obsolete

DIODE GEN PURP 1.2KV 2A DO201AD

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 1.2KV 2A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	STTH212

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	75 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.75 V

Part	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Package / Case	Mounting Type
STMicroelectronics STTH212	175 ░C	1.2 kV	DO-201AD	Standard	2 A	75 ns	10 µA	1.75 V	200 mA 500 ns	DO-201AD Axial	Through Hole
STMicroelectronics STTH212RL	175 ░C	1.2 kV	DO-201AD	Standard	2 A	75 ns	10 µA	1.75 V	200 mA 500 ns	DO-201AD Axial	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 2A Through Hole DO-201AD

Technical documentation and resources