Specification	HGTG40N60B3

Current - Collector (Ic) (Max) [Max]	70 A
Current - Collector Pulsed (Icm)	330 A
Gate Charge	250 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	290 W
Supplier Device Package	TO-247-3
Switching Energy	800 µJ, 1.05 mJ
Td (on/off) @ 25°C	47 ns
Td (on/off) @ 25°C	170 ns
Test Condition	15 V, 40 A, 3 Ohm, 480 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

HGTG40N60B3 Series

600V, PT IGBT

Part	Switching Energy	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Gate Charge	Current - Collector (Ic) (Max) [Max]	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Mounting Type	Package / Case	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor HGTG40N60B3	1.05 mJ 800 µJ	330 A	600 V	TO-247-3	250 nC	70 A	3 Ohm 15 V 40 A 480 V	47 ns	170 ns	Through Hole	TO-247-3	290 W	2 V	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HGTG40N60B3 Series

The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.