HGTG40N60B3 Series

600V, PT IGBT

Catalog

600V, PT IGBT

Part	Switching Energy	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Gate Charge	Current - Collector (Ic) (Max) [Max]	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Mounting Type	Package / Case	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor HGTG40N60B3	1.05 mJ 800 µJ	330 A	600 V	TO-247-3	250 nC	70 A	3 Ohm 15 V 40 A 480 V	47 ns	170 ns	Through Hole	TO-247-3	290 W	2 V	-55 °C	150 °C

Catalog

600V, PT IGBT

Key Features

• 70A, 600V, TC= 25°C

• 600V Switching SOA Capability

• Typical Fall Time: 100ns at TJ= 150°C

• Short Circuit Rating

• Low Conduction Loss

Description

The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.