Discrete Semiconductor Products

SI4942DY-T1-GE3

Obsolete

MOSFET 2N-CH 40V 5.3A 8SOIC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 40V 5.3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4942DY-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.1 W
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	FET Feature	Power - Max [Max]	Supplier Device Package	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Configuration	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI4942DY-T1-GE3	Logic Level Gate	1.1 W	8-SOIC	Surface Mount	8-SOIC	3.9 mm	0.154 in	3 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	5.3 A	40 V	32 nC	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI4942DY-T1-E3	Logic Level Gate	1.1 W	8-SOIC	Surface Mount	8-SOIC	3.9 mm	0.154 in	3 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	5.3 A	40 V	32 nC	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 40V 5.3A 1.1W Surface Mount 8-SOIC

Technical documentation and resources

No documents available