SI4942 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 40V 5.3A 8SOIC
| Part | FET Feature | Power - Max [Max] | Supplier Device Package | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Configuration | Technology | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Logic Level Gate | 1.1 W | 8-SOIC | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 3 V | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 5.3 A | 40 V | 32 nC | -55 °C | 150 °C |
Vishay General Semiconductor - Diodes Division | Logic Level Gate | 1.1 W | 8-SOIC | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 3 V | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 5.3 A | 40 V | 32 nC | -55 °C | 150 °C |