Discrete Semiconductor Products

SIZ260DT-T1-GE3

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MOSFET 2N-CH 80V 8.9A 8PWRPAIR

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Discrete Semiconductor Products

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MOSFET 2N-CH 80V 8.9A 8PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ260DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	24.7 A, 8.9 A, 24.6 A
Drain to Source Voltage (Vdss)	80 V
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	820 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	4.3 W, 33 W
Rds On (Max) @ Id, Vgs	24.7 mOhm, 24.5 mOhm
Supplier Device Package	8-PowerPair® (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Power - Max	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Vishay General Semiconductor - Diodes Division SIZ260DT-T1-GE3	80 V	-55 °C	150 °C	MOSFET (Metal Oxide)	820 pF	2 N-Channel (Dual)	2.4 V	8-PowerWDFN	24.5 mOhm 24.7 mOhm	4.3 W 33 W	8-PowerPair® (3.3x3.3)	27 nC	8.9 A 24.6 A 24.7 A	Surface Mount

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General part information

Mosfet Array 80V 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3)

Technical documentation and resources