SIZ260 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET 2N-CH 80V 8.9A 8PWRPAIR
| Part | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Vgs(th) (Max) @ Id | Package / Case | Rds On (Max) @ Id, Vgs | Power - Max | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 80 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 820 pF | 2 N-Channel (Dual) | 2.4 V | 8-PowerWDFN | 24.5 mOhm 24.7 mOhm | 4.3 W 33 W | 8-PowerPair® (3.3x3.3) | 27 nC | 8.9 A 24.6 A 24.7 A | Surface Mount |