Discrete Semiconductor Products

MBR40035CTR

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DIODE MOD SCHOTT 35V 200A 2TOWER

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Discrete Semiconductor Products

Active

DIODE MOD SCHOTT 35V 200A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR40035CTR

Current - Average Rectified (Io) (per Diode)	200 A
Current - Reverse Leakage @ Vr	1 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	500 ns, 200 mA
Supplier Device Package	Twin Tower
Technology	Reverse Polarity, Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	35 V
Voltage - Forward (Vf) (Max) @ If [Max]	700 mV

Part	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Speed	Package / Case	Technology	Diode Configuration	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor MBR40035CTR	200 A	700 mV	Chassis Mount	200 mA 500 ns	Twin Tower	Reverse Polarity Schottky	1 Pair Common Anode	1 mA	35 V	-55 °C	150 °C	Twin Tower
GeneSiC Semiconductor MBR40035CTRL	200 A		Chassis Mount	200 mA 500 ns	Twin Tower	Schottky	1 Pair Common Anode	3 mA	35 V	-55 °C	150 °C	Twin Tower	600 mV
GeneSiC Semiconductor MBR40035CT	200 A	700 mV	Chassis Mount	200 mA 500 ns	Twin Tower	Schottky	1 Pair Common Cathode	1 mA	35 V	-55 °C	150 °C	Twin Tower
GeneSiC Semiconductor MBR40035CTL	200 A		Chassis Mount	200 mA 500 ns	Twin Tower	Schottky	1 Pair Common Cathode	3 mA	35 V	-55 °C	150 °C	Twin Tower	600 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Anode 35 V 200A Chassis Mount Twin Tower

Technical documentation and resources