MBR40035 Series

Catalog

DIODE MOD SCHOTT 35V 200A 2TOWER

Part	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Speed	Package / Case	Technology	Diode Configuration	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor MBR40035CTR	200 A	700 mV	Chassis Mount	200 mA 500 ns	Twin Tower	Reverse Polarity Schottky	1 Pair Common Anode	1 mA	35 V	-55 °C	150 °C	Twin Tower
GeneSiC Semiconductor MBR40035CTRL	200 A		Chassis Mount	200 mA 500 ns	Twin Tower	Schottky	1 Pair Common Anode	3 mA	35 V	-55 °C	150 °C	Twin Tower	600 mV
GeneSiC Semiconductor MBR40035CT	200 A	700 mV	Chassis Mount	200 mA 500 ns	Twin Tower	Schottky	1 Pair Common Cathode	1 mA	35 V	-55 °C	150 °C	Twin Tower
GeneSiC Semiconductor MBR40035CTL	200 A		Chassis Mount	200 mA 500 ns	Twin Tower	Schottky	1 Pair Common Cathode	3 mA	35 V	-55 °C	150 °C	Twin Tower	600 mV