Discrete Semiconductor Products

SIHB28N60EF-GE3

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MOSFET N-CH 600V 28A D2PAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 28A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHB28N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	2714 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	123 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIHB28N60EF-GE3	2714 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	N-Channel	30 V	123 mOhm	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	600 V	D2PAK	10 V	250 W	120 nC	28 A

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General part information

N-Channel 600 V 28A (Tc) 250W (Tc) Surface Mount D2PAK

Technical documentation and resources