SIHB28 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 28A D2PAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs(th) (Max) @ Id | FET Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2714 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4 V | N-Channel | 30 V | 123 mOhm | -55 °C | 150 °C | Surface Mount | MOSFET (Metal Oxide) | 600 V | D2PAK | 10 V | 250 W | 120 nC | 28 A |