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STB43N60DM2
Discrete Semiconductor Products

STB43N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 0.085 OHM TYP., 34 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

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STB43N60DM2
Discrete Semiconductor Products

STB43N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.085 OHM TYP., 34 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB43N60DM2
Current - Continuous Drain (Id) @ 25°C34 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC
Input Capacitance (Ciss) (Max) @ Vds2500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)250 W
Rds On (Max) @ Id, Vgs93 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 2.62

Description

General part information

STB43N60DM2 Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources