Discrete Semiconductor Products
YQ5LAM10ETR
ActiveRohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 5A, PMDTM, HIGHLY EFFICIENT SBD
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Discrete Semiconductor Products
YQ5LAM10ETR
ActiveRohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 5A, PMDTM, HIGHLY EFFICIENT SBD
Technical Specifications
Parameters and characteristics for this part
| Specification | YQ5LAM10ETR |
|---|---|
| Capacitance @ Vr, F | 200 pF |
| Current - Average Rectified (Io) | 5 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | SOD-128 |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | PMDTM |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 610 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
YQ5LAM10E Series
The YQ5LAM10E is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Documents
Technical documentation and resources